vishay siliconix SUM60N02-3m9p document number: 69820 s-80183-rev. a, 04-feb-08 www.vishay.com 1 n-channel 20-v (d-s) 175 c mosfet features ? trenchfet ? power mosfet ? 175 c junction temperature ? 100 % r g tested ? 100 % uis tested applications ? or-ing product summary v (br)dss (v) r ds(on) ( ) i d (a) a 20 0.0039 at v gs = 10 v 60 0.0052 at v gs = 4.5 v 60 drain connected to t a b t o-263 s d g t op v i e w ordering information: SUM60N02-3m9p-e3 (lead (pb)-free) d g s n-channel mosfet notes: a. package limited. b. duty cycle 1 %. c. see soa curve for voltage derating. d. when mounted on 1" square pcb (fr-4 material). absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 20 continuous drain current (t j = 175 c) t c = 25 c i d 60 a a t c = 100 c 60 a pulsed drain current i dm 120 single pulse avalanche current l = 0.1 mh i as 50 single pulse avalanche energy e as 125 mj maximum power dissipation b t c = 25 c p d 120 c w t a = 25 c d 3.75 operating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient (pcb mount) d r thja 40 c/w junction-to-case r thjc 1.25 rohs compliant
www.vishay.com 2 document number: 69820 s-80183-rev. a, 04-feb-08 vishay siliconix SUM60N02-3m9p notes: a. pulse test; pulse width 300 s, duty cycle 2 % b. independent of operating temperature. c. guaranteed by design, not su bject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v (br)dss v ds = 0 v, i d = 250 a 20 v gate-threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 3 gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 1 a v ds = 20 v, v gs = 0 v, t j = 125 c 50 v ds = 20 v, v gs = 0 v, t j = 175 c 250 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 100 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 20 a 0.0031 0.0039 v gs = 10 v, i d = 20 a, t j = 125 c 0.0059 v gs = 10 v, i d = 20 a, t j = 175 c 0.007 v gs = 4.5 v, i d = 20 a 0.0042 0.0052 forward transconductance a g fs v ds = 10 v, i d = 20 a 95 s dynamic b input capacitance c iss v gs = 0 v, v ds = 10 v, f = 1 mhz 5950 pf output capacitance c oss 985 reverse transfer capacitance c rss 365 total gate charge b q g v ds = 10 v, v gs = 4.5 v, i d = 50 a 33 50 nc gate-source charge b q gs 18 gate-drain charge b q gd 7 gate resistance r g 0.75 1.5 2.3 tu r n - o n d e l ay t i m e b t d(on) v dd = 10 v, r l = 0.2 i d ? 50 a, v gen = 10 v, r g = 1.0 15 25 ns rise time b t r 711 turn-off delay time b t d(off) 35 55 fall time b t f 812 source-drain diode ratings and characteristics t c = 25 c c continuous current i s 60 a pulsed current i sm 100 forward voltage a v sd i f = 20 a, v gs = 0 v 0.85 1.5 v reverse recovery time t rr i f = 20 a, di/dt = 100 a/s 45 90 ns peak reverse recovery current i rm 1.7 3.4 a reverse recovery charge q rr 0.039 0.155 c
document number: 69820 s-80183-rev. a, 04-feb-08 www.vishay.com 3 vishay siliconix SUM60N02-3m9p typical characteristics 25 c, unless otherwise noted output characteristics transconductance on-resistance vs. gate-to-source voltage 0 20 40 60 8 0 100 120 012345 v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d v gs =10thr u 5 v v gs =3 v v gs =4 v 0 40 8 0 120 160 200 0 1020304050 i d - drain c u rrent (a) - transcond u ctance (s) g fs t c = 25 c t c = 125 c t c = -55 c 0.000 0.004 0.00 8 0.012 0.016 0.020 0246 8 10 - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) t a = 25 c t a = 125 c i d =20a transfer characteristics on-resistance vs. drain current capacitance 0 20 40 60 8 0 100 120 012345 v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d t c =25 c t c = - 55 c t c = 125 c 0.000 0.002 0.004 0.006 0.00 8 0.010 0 204060 8 0 100 - on-resistance ( ) r ds(on) i d - drain c u rrent (a) v gs =10 v v gs =4.5 v c rss 0 1500 3000 4500 6000 7500 0246 8 10 12 14 16 1 8 20 c oss c iss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf)
www.vishay.com 4 document number: 69820 s-80183-rev. a, 04-feb-08 vishay siliconix SUM60N02-3m9p typical characteristics 25 c, unless otherwise noted gate charge source-drain diode forward voltage typical drain-source brakdown voltage vs. junction temperature 0 2 4 6 8 10 0204060 8 0 - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs i d =50a v ds =10 v v ds = 16 v 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 1 0.01 0.001 0.1 10 100 t j = 25 c t j = 150 c 26 27 2 8 29 30 31 32 33 - 50 - 25 0 25 50 75 100 125 150 175 typical drain-so u rce brakdo w n v oltage t j - temperat u re (c) i d =1ma on-resistance vs. junction temperature threshold voltage single pulse avalanche current vs. time 0.5 0. 8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 175 t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) i d =20a v gs =10 v v gs =4.5 v - 1.5 - 1.0 - 0.5 0.0 0.5 - 50 - 25 0 25 50 75 100 125 150 175 i d = 250 a v ariance ( v ) v gs(th) t j - temperat u re (c) i d =5ma 0.00001 0.0001 0.001 0.01 0.10 1 t j = 150 c 10 t in (s) (a) i da v t j =25 c 1 100
document number: 69820 s-80183-rev. a, 04-feb-08 www.vishay.com 5 vishay siliconix SUM60N02-3m9p typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69820. drain current vs. ambient temperature 0 30 60 90 120 150 0 25 50 75 100 125 150 175 t a - am b ient temperat u re (c) i d - drain c u rrent (a) package limited safe operating area v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d 1000 10 0.1 1 10 100 t c = 25 c single p u lse 1ms 10 ms 1 1s,10s,dc 100 10 s, 100 s 100 ms limited b yr ds(on) * normalized thermal transient impedance, junction-to-case 10 -3 10 -2 0 1 1 10 -1 10 -4 0.2 0.1 d u ty cycle = 0.5 s qu are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 single p u lse 0.02 0.05
package information www.vishay.com vishay siliconix revison: 30-sep-13 1 document number: 71198 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-263 (d 2 pak): 3-lead notes 1. plane b includes maximum featur es of heat sink tab and plastic. 2. no more than 25 % of l1 ca n fall above seating plane by max. 8 mils. 3. pin-to-pin coplanarity max. 4 mils. 4. *: thin lead is for sub, syb. thick lead is for sum, sym, sqm. 5. use inches as the primary measurement. 6. this feature is for thick lead. -a- -b- d1 d4 a a e b2 b e a c2 c l2 d l3 l detail ?a? e1 e2 k e3 d2 d3 6 0.010 m a m 2 pl detail a (rotated 90) s ection a-a 0 - 5 l1 l4 m c1 c b1 b inches millimeters dim. min. max. min. max. a 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 b2 0.045 0.055 1.143 1.397 c* thin lead 0.013 0.018 0.330 0.457 thick lead 0.023 0.028 0.584 0.711 c1 thin lead 0.013 0.017 0.330 0.431 thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 d 0.340 0.380 8.636 9.652 d1 0.220 0.240 5.588 6.096 d2 0.038 0.042 0.965 1.067 d3 0.045 0.055 1.143 1.397 d4 0.044 0.052 1.118 1.321 e 0.380 0.410 9.652 10.414 e1 0.245 - 6.223 - e2 0.355 0.375 9.017 9.525 e3 0.072 0.078 1.829 1.981 e 0.100 bsc 2.54 bsc k 0.045 0.055 1.143 1.397 l 0.575 0.625 14.605 15.875 l1 0.090 0.110 2.286 2.794 l2 0.040 0.055 1.016 1.397 l3 0.050 0.070 1.270 1.778 l4 0.010 bsc 0.254 bsc m - 0.002 - 0.050 ecn: t13-0707-rev. k, 30-sep-13 dwg: 5843
an826 vishay siliconix document number: 73397 11-apr-05 www.vishay.com 1 recommended minimum pads for d 2 pak: 3-lead 0.635 (16.129) recommended minimum pads dimensions in inches/(mm) 0.420 (10.668) 0.355 (9.017) 0.145 (3.683) 0.135 (3.429) 0.200 (5.080) 0.050 (1.257) return to index
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